sep.2000 g m f r p n gup eup gun eun u gvp evp v gvn evn gwp ewp w gwn ewn tab #250, t = 0.8 tab #110, t = 0.5 s - dia. (2 typ.) p g u pe u p g u ne u n u g v pe v p g v ne v n v g w pe w p g w ne w n w n d j a c b k h h n p r q r q r l e dimensions inches millimeters a 4.21 107.0 b 3.66 0.01 93.0 0.2 c 3.19 81.0 d 1.77 45.0 e 1.18 30.0 f 1.11 28.2 g 1.05 26.6 h 0.85 21.5 j 0.83 21.0 description: mitsubishi igbt modules are de- signed for use in switching appli- cations. each module consists of six igbts in a three phase bridge configuration, with each transistor having a reverse-connected super- fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM15TF-24H is a 1200v (v ces ), 15 ampere six-igbt module. type current rating v ces amperes volts (x 50) cm 15 24 dimensions inches millimeters k 0.79 20.0 l 0.71 18.0 m 0.69 17.5 n 0.69 17.5 p 0.63 16.0 q 0.55 14.0 r 0.30 7.5 s 0.22 dia. dia. 5.5 outline drawing and circuit diagram mitsubishi igbt modules CM15TF-24H medium power switching use insulated type
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 15 amperes peak collector current i cm 30* amperes emitter current** (t c = 25 c) i e 15 amperes peak emitter current** i em 30* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 150 watts mounting torque, m5 mounting C 1.47 ~ 1.96 n m weight C 260 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms *pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c =1. 5ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 15a, v ge = 15v C 2.5 3.4** volts i c = 15a, v ge = 15v, t j = 150 c C 2.25 C volts total gate charge q g v cc = 600v, i c = 15a, v ge = 15v C 75 C nc emitter-collector voltage v ec i e = 15a, v ge = 0v C C 3.5 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 3 nf output capacitance c oes v ge = 0v, v ce = 10v C C 1.1 nf reverse transfer capacitance c res C C 0.6 nf resistive turn-on delay time t d(on) C C 100 ns load rise time t r v cc = 600v, i c = 150a, C C 200 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 21 w C C 150 ns times fall time t f C C 350 ns diode reverse recovery time t rr i e = 15a, di e /dt = C30a/ m s C C 250 ns diode reverse recovery charge q rr i e = 15a, di e /dt = C30a/ m s C 0.11 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.80 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 1.40 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.058 c/w mitsubishi igbt modules CM15TF-24H medium power switching use insulated type
sep.2000 mitsubishi igbt modules CM15TF-24H medium power switching use insulated type collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 0 15 7 30 5 10 15 20 25 v ge = 20v t j = 25 o c 12 11 10 9 8 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 30 0 5 10 15 20 25 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 4 3 2 1 0 5 1015202530 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 30a i c = 15a i c = 6a emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 1 10 -2 v ge = 0v 10 1 c ies c oes c res 10 -1 10 0 collector current, i c , (amperes) switching time, (ns) half-bridge switching characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 21 w t j = 125 c t f emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -30a/ m sec t j = 25 c 10 1 10 0 10 -1 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 120 16 12 8 4 0 20 40 60 80 100 v cc = 400v i c = 15a v cc = 600v 10 0 10 2 7 5 3 2 1.0 1.5 2.0 10 1 7 5 3 2 2.5 3.0 3.5 t j = 25 c
sep.2000 mitsubishi igbt modules CM15TF-24H medium power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 1.4 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.8 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
|
